MOSFET Power Transistor for 175/530 MHz, 70 Watt.

MOSFET Power Transistor for 175/530 MHz, 70 Watt.

MOSFET Power Transistor for 175/530 MHz, 70 Watt.

DESCRIPTION

RD70HUF2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifier applications.

CHARACTERISTICS

1. Supplied with tape and reel. 500 units per reel.

2. Using the mold package

3. High power and high efficiency

Pout = 75Wtyp, Drain Effi. = 64% typ @ Vds = 12.5V Idq = 1.0A Pin = 5.5W f = 530MHz

Pout = 84Wtyp, Drain Effi. = 74% typ @ Vds = 12.5V Idq = 1.0A Pin = 4.0W f = 175MHz

4. Integrated gate protection diode.

APPLICATION

Output stage of high power amplifiers in VHF/UHF band of mobile radios.